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Rectenna Design for RF Energy Harvesting using CMOS 350nm and FDSOI 28nm

Abstract : The need for the reduction of energy consumption and size of microelectronic circuits is increasingly in demand. To support this request, this paper presents a comparison study on two integrated technologies: FDSOI 28nm and CMOS 350nm. The aim of this work was to compare the performance of these two technologies for the design of a rectifier and a Dickson charge pump for rectenna application. The results showed an improved 22%-output voltage gain for a given simple rectifier and a 16%-output voltage gain for a Dickson charge pump in FDSOI technology compared to CMOS, for an input voltage and power as low as 0.5 V and 0 dBm. Those results allowed to prove that FDSOI 28nm is a better technology choice for Energy Harvesting and Low-Power applications.
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Submitted on : Tuesday, January 30, 2018 - 9:11:45 AM
Last modification on : Tuesday, April 5, 2022 - 11:42:03 AM
Long-term archiving on: : Friday, May 25, 2018 - 12:34:41 PM


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Edouard Rochefeuille, Frédéric Alicalapa, Alexandre Douyère, T.-P. Vuong. Rectenna Design for RF Energy Harvesting using CMOS 350nm and FDSOI 28nm. IEEE Radio and Antenna Days of the Indian Ocean (RADIO), Sep 2017, Le Cap, South Africa. ⟨10.23919/RADIO.2017.8242246⟩. ⟨hal-01696046⟩



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