Rectenna Design for RF Energy Harvesting using CMOS 350nm and FDSOI 28nm - Université de La Réunion Access content directly
Conference Papers Year : 2017

Rectenna Design for RF Energy Harvesting using CMOS 350nm and FDSOI 28nm

Abstract

The need for the reduction of energy consumption and size of microelectronic circuits is increasingly in demand. To support this request, this paper presents a comparison study on two integrated technologies: FDSOI 28nm and CMOS 350nm. The aim of this work was to compare the performance of these two technologies for the design of a rectifier and a Dickson charge pump for rectenna application. The results showed an improved 22%-output voltage gain for a given simple rectifier and a 16%-output voltage gain for a Dickson charge pump in FDSOI technology compared to CMOS, for an input voltage and power as low as 0.5 V and 0 dBm. Those results allowed to prove that FDSOI 28nm is a better technology choice for Energy Harvesting and Low-Power applications.
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Dates and versions

hal-01696046 , version 1 (30-01-2018)

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Edouard Rochefeuille, Frédéric Alicalapa, Alexandre Douyère, T.-P. Vuong. Rectenna Design for RF Energy Harvesting using CMOS 350nm and FDSOI 28nm. IEEE Radio and Antenna Days of the Indian Ocean (RADIO), Sep 2017, Le Cap, South Africa. ⟨10.23919/RADIO.2017.8242246⟩. ⟨hal-01696046⟩
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