The need for the reduction of energy consumption and size of microelectronic circuits is increasingly in demand. To support this request, this paper presents a comparison study on two integrated technologies: FDSOI 28nm and CMOS 350nm. The aim of this work was to compare the performance of these two technologies for the design of a rectifier and a Dickson charge pump for rectenna application. The results showed an improved 22%-output voltage gain for a given simple rectifier and a 16%-output voltage gain for a Dickson charge pump in FDSOI technology compared to CMOS, for an input voltage and power as low as 0.5 V and 0 dBm. Those results allowed to prove that FDSOI 28nm is a better technology choice for Energy Harvesting and Low-Power applications.