Rectenna Design for RF Energy Harvesting using CMOS 350nm and FDSOI 28nm

Edouard Rochefeuille; Frédéric Alicalapa; Alexandre Douyère; T.-P. Vuong

Rectenna Design for RF Energy Harvesting using CMOS 350nm and FDSOI 28nm

Edouard Rochefeuille ^{1, 2} Frédéric Alicalapa ¹ Alexandre Douyère ¹ T.-P. Vuong ²

1 LE2P - Laboratoire d'Energétique, d'Electronique et Procédés

2 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation

Abstract : The need for the reduction of energy consumption and size of microelectronic circuits is increasingly in demand. To support this request, this paper presents a comparison study on two integrated technologies: FDSOI 28nm and CMOS 350nm. The aim of this work was to compare the performance of these two technologies for the design of a rectifier and a Dickson charge pump for rectenna application. The results showed an improved 22%-output voltage gain for a given simple rectifier and a 16%-output voltage gain for a Dickson charge pump in FDSOI technology compared to CMOS, for an input voltage and power as low as 0.5 V and 0 dBm. Those results allowed to prove that FDSOI 28nm is a better technology choice for Energy Harvesting and Low-Power applications.

Keywords : reduction of energy consumption Rectenna Design CMOS 350nm FDSOI 28nm Energy Harvesting

Document type :

Conference papers

Domain :

Engineering Sciences [physics] / Electronics

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http://hal.univ-reunion.fr/hal-01696046
Contributor : Marie-Laure Perony-Charton <>
Submitted on : Tuesday, January 30, 2018 - 9:11:45 AM
Last modification on : Monday, September 2, 2019 - 9:41:28 AM
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