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FDSOI 28nm performances study for RF energy scavenging

Abstract : This paper presents a study on an integrated technology: Fully-Depleted-Silicon-On-Insulator (FDSOI) at a 28nm node. FDSOI results are compared to another technology: Complementary-Metal-Oxide-Semiconductor (CMOS) 350nm. The aim of this work was to demonstrate the advantages of using FDSOI technology in RF energy scavenging applications. Characteristics of transistors are pointed out and results showed an improved 22%-output voltage gain for a series rectifier and a 13%-output voltage gain for a Dickson charge pump in FDSOI technology compared to CMOS, for an input voltage and power of 0.5 V and 0 dBm respectively. Those results allowed to prove that FDSOI 28nm is a better technology choice for energy scavenging and low-power applications.
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Submitted on : Wednesday, August 22, 2018 - 7:55:24 AM
Last modification on : Tuesday, April 5, 2022 - 11:42:04 AM
Long-term archiving on: : Friday, November 23, 2018 - 12:13:34 PM


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Edouard Rochefeuille, Frédéric Alicalapa, Alexandre Douyère, Tan-Phu Vuong. FDSOI 28nm performances study for RF energy scavenging. IEEE Radio and Antenna Days of the Indian Ocean (IEEE RADIO 2017), Sep 2017, Cape Town, South Africa. pp.012009, ⟨10.1088/1757-899X/321/1/012009⟩. ⟨hal-01742478⟩



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