Fully Microstrip Three-Port Circuit Bandpass NGD Design and Test - Laboratoire d'Energétique, d'Electronique et Procédés
Article Dans Une Revue IEEE Design & Test Année : 2023

Fully Microstrip Three-Port Circuit Bandpass NGD Design and Test

Alexandre Douyere
Yang Liu
  • Fonction : Auteur
Wenceslas Rahajandraibe
Fayu Wan
George Chan

Résumé

An innovative design and test of three-port distributed circuit exhibiting double bandpass (BP) negative group delay (NGD) effect is investigated. The distributed topology is constituted by resistive transmission lines (TLs) with one input and two output accesses. The BP-NGD specifications are defined. The transfer matrix-based modelling is elaborated. The doublebranch NGD theorization is based on the equivalent model of voltage transfer function (VTF) between Port1-Port2 and Port1-Port3. The VTF analytical expressions in function of TL parameters are formulated. Group delay (GD) innovative formulas are derived. The feasibility study is based on the BP-NGD design of 3-port hybrid microstrip prototype implemented on Rogers Duroid-AD1000 dielectric substrate. To validate the concept, the VTF magnitudes and GDs computed with MATLAB® are compared with commercial tool simulation and experimental results. The modelled, simulated and measured three-port circuit results show NGD responses in very good agreement. It was emphasized that the two transmission ways of the tested circuit operate with BP-NGD behavior confirmation. The measured NGD value and bandwidth of about-3.8 ns and 75 MHz at center frequency of about 0.74 GHz are obtained.
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Dates et versions

hal-04475024 , version 1 (23-02-2024)

Identifiants

Citer

Blaise Ravelo, Alexandre Douyere, Yang Liu, Wenceslas Rahajandraibe, Fayu Wan, et al.. Fully Microstrip Three-Port Circuit Bandpass NGD Design and Test. IEEE Design & Test, 2023, 40 (1), pp.96-104. ⟨10.1109/MDAT.2022.3164337⟩. ⟨hal-04475024⟩
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