Article Dans Une Revue Journal de Physique Colloques Année : 1980

CONDUCTIVITY OF SELENIUM IN SEMICONDUCTOR-METAL TRANSITION REGION AT HIGH TEMPERATURES AND PRESSURES

V. Alekseev
  • Fonction : Auteur
V. Ovcharenko
  • Fonction : Auteur
Yu. Ryzhkov
  • Fonction : Auteur

Résumé

Electrical conductivity of Selenum has been measured in semiconductor metal transition region at pressures up to 0.4 GPa and temperatures up to 2100 K. It was observed that the origin of semiconductor-metal transition shifted to lower temperatures and metallic conductivity region was expanded. With pressure increasing the metallic conductivity level gradually increases from 102 Ω-1 cm-1 at 0.1 GPa to 103 Ω-lcm-1 at 0.4 GPa. On the other hand the metal-isolator transition shifts apparently to higher temperatures with pressure increasing. These data are compared with results on metal-nonmetal transition in arsenic and mercury. The character of semiconductor-metal and metal-isolator transitions is discussed.

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jpa-00220330 , version 1 (04-02-2008)

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V. Alekseev, V. Ovcharenko, Yu. Ryzhkov. CONDUCTIVITY OF SELENIUM IN SEMICONDUCTOR-METAL TRANSITION REGION AT HIGH TEMPERATURES AND PRESSURES. Journal de Physique Colloques, 1980, 41 (C8), pp.C8-89-C8-90. ⟨10.1051/jphyscol:1980824⟩. ⟨jpa-00220330⟩

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